42

Single FETs, MOSFETs

Packaging

Bag

Box

Bulk

Cut Tape (CT)

Strip

Tape & Box (TB)

Tape & Reel (TR)

Tray

Tube

Product Status

Active

Obsolete

Discontinued

Last Time Buy

Not For New Designs

Mounting Type

Chassis Mount

Surface Mount

Surface Mount, Wettable Flank

Through Hole

Technology

GaNFET (Cascode Gallium Nitride FET)

GaNFET (Gallium Nitride)

MOSFET (Metal Oxide)

SiC (Silicon Carbide Junction Transistor)

SiCFET (Cascode SiCJFET)

SiCFET (Silicon Carbide)

FET Type

N-Channel

P-Channel

FET Feature

Current Sensing

Depletion Mode

Logic Level Gate, 4V Drive

Schottky Diode (Body)

Schottky Diode (Isolated)

Temperature Sensing Diode

Grade

Automotive

Military

Mfr Part #	Quantity	Price	Series	Package	Product Status	Package / Case	Mounting Type	Operating Temperature	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Feature	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Grade	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Qualification
GCMX040B120S1-E1 SIC 1200V 40M MOSFET SOT-227 SemiQ Datasheet	107 In Stock	1 : $28.23 10 : $250.80 100 : $2,194.00 500 : $9,360.00 Tube		Tube	Active	SOT-227-4, miniBLOC	Chassis Mount	-55°C ~ 175°C (TJ)	SiC (Silicon Carbide Junction Transistor)	N-Channel	57A (Tc)	52mOhm @ 40A, 20V	-	242W (Tc)	4V @ 10mA	SOT-227	-	20V	+25V, -10V	1200 V	121 nC @ 20 V	3185 pF @ 1000 V	-
GCMX080B120S1-E1 SIC 1200V 80M MOSFET SOT-227 SemiQ Datasheet	60 In Stock	1 : $22.22 10 : $197.50 100 : $1,727.00 500 : $7,370.00 Tube		Tube	Active	SOT-227-4, miniBLOC	Chassis Mount	-55°C ~ 175°C (TJ)	SiCFET (Silicon Carbide)	N-Channel	30A (Tc)	100mOhm @ 20A, 20V	-	142W (Tc)	4V @ 10mA	SOT-227	-	20V	+25V, -10V	1200 V	58 nC @ 20 V	1336 pF @ 1000 V	-
GCMS040B120S1-E1 SIC 1200V 40M MOSFET & 15A SBD S SemiQ Datasheet	88 In Stock	1 : $33.55 10 : $298.10 100 : $2,607.00 Tube		Tube	Active	SOT-227-4, miniBLOC	Chassis Mount	-55°C ~ 175°C (TJ)	SiC (Silicon Carbide Junction Transistor)	N-Channel	57A (Tc)	52mOhm @ 40A, 20V	-	242W (Tc)	4V @ 10mA	SOT-227	-	20V	+25V, -10V	1200 V	124 nC @ 20 V	3110 pF @ 1000 V	-
GCMS080B120S1-E1 SIC 1200V 80M MOSFET & 10A SBD S SemiQ Datasheet	40 In Stock	1 : $24.74 10 : $219.80 100 : $1,923.00 500 : $8,205.00 Tube		Tube	Active	SOT-227-4, miniBLOC	Chassis Mount	-55°C ~ 175°C (TJ)	SiCFET (Silicon Carbide)	N-Channel	30A (Tc)	100mOhm @ 20A, 20V	-	142W (Tc)	4V @ 10mA	SOT-227	-	20V	+25V, -10V	1200 V	58 nC @ 20 V	1374 pF @ 1000 V	-
GP2T080A120U SIC MOSFET 1200V 80M TO-247-3L SemiQ Datasheet	1,399 In Stock	1 : $11.42 30 : $273.60 120 : $979.20 510 : $3,672.00 1,020 : $6,609.60 Tube		Tube	Active	TO-247-3	Through Hole	-55°C ~ 175°C (TJ)	SiCFET (Silicon Carbide)	N-Channel	35A (Tc)	100mOhm @ 20A, 20V	-	188W (Tc)	4V @ 10mA	TO-247-3	-	20V	+25V, -10V	1200 V	58 nC @ 20 V	1377 pF @ 1000 V	-
GP2T040A120U SIC MOSFET 1200V 40M TO-247-3L SemiQ Datasheet	61 In Stock	1 : $20.04 30 : $486.90 120 : $1,832.40 510 : $7,058.40 Tube		Tube	Active	TO-247-3	Through Hole	-55°C ~ 175°C (TJ)	SiCFET (Silicon Carbide)	N-Channel	63A (Tc)	52mOhm @ 40A, 20V	-	322W (Tc)	4V @ 10mA	TO-247-3	-	20V	+25V, -10V	1200 V	118 nC @ 20 V	3192 pF @ 1000 V	-
GP2T040A120H SIC MOSFET 1200V 40M TO-247-4L SemiQ Datasheet	55 In Stock	1 : $20.47 30 : $497.10 120 : $1,870.80 510 : $7,206.30 Tube		Tube	Active	TO-247-4	Through Hole	-55°C ~ 175°C (TJ)	SiCFET (Silicon Carbide)	N-Channel	63A (Tc)	52mOhm @ 40A, 20V	-	322W (Tc)	4V @ 10mA	TO-247-4	-	20V	+25V, -10V	1200 V	118 nC @ 20 V	3192 pF @ 1000 V	-
GP2T080A120H SIC MOSFET 1200V 80M TO-247-4L SemiQ Datasheet	13 In Stock	1 : $11.20 30 : $268.20 120 : $960.00 510 : $3,600.60 1,020 : $6,477.00 Tube		Tube	Active	TO-247-4	Through Hole	-55°C ~ 175°C (TJ)	SiCFET (Silicon Carbide)	N-Channel	35A (Tc)	100mOhm @ 20A, 20V	-	188W (Tc)	4V @ 10mA	TO-247-4	-	20V	+25V, -10V	1200 V	61 nC @ 20 V	1377 pF @ 1000 V	-
GHXS060B120S-D3 DIODE MOD SIC 1200V 161A SOT227 SemiQ Datasheet	28 In Stock	1 : $93.93 10 : $857.50 Tube		Tube	Discontinued	SOT-227-4, miniBLOC	Chassis Mount	-	SiC (Silicon Carbide) Schottky	-	-	-	-	-	-	SOT-227	-	-	-	-	-	-	-
GP3D060A120U DIODE ARR SIC 1200V 30A TO247-3 SemiQ Datasheet	0 In Stock	30 : $702.90 Tube	Amp+™	Tube	Active	TO-247-3	Through Hole	-	SiC (Silicon Carbide) Schottky	-	-	-	-	-	-	TO-247-3	-	-	-	-	-	-	-

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Single FETs, MOSFETs

Manufacturer

Series

Packaging

Product Status

Package / Case

Mounting Type

Operating Temperature

Technology

FET Type

Current - Continuous Drain (Id) @ 25°C

Rds On (Max) @ Id, Vgs

FET Feature

Power Dissipation (Max)

Vgs(th) (Max) @ Id

Supplier Device Package

Grade

Drive Voltage (Max Rds On, Min Rds On)

Vgs (Max)

Drain to Source Voltage (Vdss)

Gate Charge (Qg) (Max) @ Vgs

Input Capacitance (Ciss) (Max) @ Vds

Qualification

Single FETs, MOSFETs

Manufacturer

Series

Packaging

Product Status

Package / Case

Mounting Type

Operating Temperature

Technology

FET Type

Current - Continuous Drain (Id) @ 25°C

Rds On (Max) @ Id, Vgs

FET Feature

Power Dissipation (Max)

Vgs(th) (Max) @ Id

Supplier Device Package

Grade

Drive Voltage (Max Rds On, Min Rds On)

Vgs (Max)

Drain to Source Voltage (Vdss)

Gate Charge (Qg) (Max) @ Vgs

Input Capacitance (Ciss) (Max) @ Vds

Qualification

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Environmental Options

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