GP2T080A120U _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	GP2T080A120U
Manufacturer	SemiQ
Other Part Numbers	1560-GP2T080A120U-ND 1560-GP2T080A120U
Description	SIC MOSFET 1200V 80M TO-247-3L
Detailed Description	N-Channel 1200 V 35A (Tc) 188W (Tc) Through Hole TO-247-3
Manufacturer Standard Lead Time	30 weeks

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		SemiQ
Series
Packaging		Tube
Part Status		Active
Package / Case		TO-247-3
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 175°C (TJ)
Technology		SiCFET (Silicon Carbide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		35A (Tc)
Rds On (Max) @ Id, Vgs		100mOhm @ 20A, 20V
Power Dissipation (Max)		188W (Tc)
Vgs(th) (Max) @ Id		4V @ 10mA
Supplier Device Package		TO-247-3
Drive Voltage (Max Rds On, Min Rds On)		20V
Vgs (Max)		+25V, -10V
Drain to Source Voltage (Vdss)		1200 V
Gate Charge (Qg) (Max) @ Vgs		58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds		1377 pF @ 1000 V

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Affected
RoHS Status		ROHS3 Compliant

Can ship immediately.

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