AS1M040120T _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	AS1M040120T
Manufacturer	Anbon Semiconductor
Other Part Numbers	4530-AS1M040120T-ND 4530-AS1M040120T
Description	N-CHANNEL SILICON CARBIDE POWER
Detailed Description	N-Channel 1200 V 60A (Tc) 330W (Tc) Through Hole TO-247-4
Manufacturer Standard Lead Time	7 days
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Anbon Semiconductor
Series
Packaging		Tube
Part Status		Active
Package / Case		TO-247-4
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 150°C (TJ)
Technology		SiCFET (Silicon Carbide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		60A (Tc)
Rds On (Max) @ Id, Vgs		55mOhm @ 40A, 20V
Power Dissipation (Max)		330W (Tc)
Vgs(th) (Max) @ Id		4V @ 10mA
Supplier Device Package		TO-247-4
Drive Voltage (Max Rds On, Min Rds On)		20V
Vgs (Max)		+25V, -10V
Drain to Source Voltage (Vdss)		1200 V
Gate Charge (Qg) (Max) @ Vgs		142 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds		2946 pF @ 1000 V

RESOURCE TYPE		LINK
Datasheets		AS1M040120T

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.21.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
RoHS Status		ROHS3 Compliant

Can ship immediately.

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