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CGD65A130S2-T13

Part Number
CGD65A130S2-T13
Manufacturer Cambridge GaN Devices
Other Part Numbers
4768-CGD65A130S2-T13TR-ND
4768-CGD65A130S2-T13CT-ND
4768-CGD65A130S2-T13DKR-ND
4768-CGD65A130S2-T13DKR
4768-CGD65A130S2-T13TR
4768-CGD65A130S2-T13CT
Description 650V GAN HEMT, 130MOHM, DFN8X8.
Detailed Description 650 V 12A (Tc) Surface Mount 16-DFN (8x8)
Manufacturer Standard Lead Time 26 weeks

Product Attributes

Category
Manufacturer Cambridge GaN Devices
Series
ICeGaN™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Part Status Active
Package / Case 16-PowerVDFN
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Rds On (Max) @ Id, Vgs 182mOhm @ 900mA, 12V
FET Feature Current Sensing
Vgs(th) (Max) @ Id 4.2V @ 4.2mA
Supplier Device Package 16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On) 12V
Vgs (Max) +20V, -1V
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 2.3 nC @ 12 V

Documents & Media

RESOURCE TYPE LINK

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
ECCN EAR99
HTSUS 8541.29.0095
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant

In Stock: 3352

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