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G3S06504C

Part Number
G3S06504C
Manufacturer Global Power Technology
Other Part Numbers
3383-G3S06504C-ND
3383-G3S06504CTB
3383-G3S06504C
3383-G3S06504CCT
3383-G3S06504CTB-ND
3383-G3S06504C-ND
Description DIODE SIL CARB 650V 11.5A TO252
Detailed Description Diode 650 V 11.5A Surface Mount TO-252
Datasheet Datasheet

Product Attributes

Category
Manufacturer Global Power Technology
Series
Packaging
Bulk
Part Status Active
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Technology SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F 181pF @ 0V, 1MHz
Current - Average Rectified (Io) 11.5A
Supplier Device Package TO-252
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 650 V
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
Current - Reverse Leakage @ Vr 50 µA @ 650 V

Documents & Media

RESOURCE TYPE LINK
Datasheets G3S06504C
HTML Datasheet G3S06504C

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
ECCN EAR99
HTSUS 8541.10.0080
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH info available upon request

In Stock: 30

Can ship immediately.
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