Part Number |
G3S06504C
|
---|---|
Manufacturer | Global Power Technology |
Other Part Numbers |
3383-G3S06504C-ND
3383-G3S06504CTB
3383-G3S06504C
3383-G3S06504CCT
3383-G3S06504CTB-ND
3383-G3S06504C-ND
|
Description | DIODE SIL CARB 650V 11.5A TO252 |
Detailed Description | Diode 650 V 11.5A Surface Mount TO-252 |
Datasheet | Datasheet |
Category | ||
---|---|---|
Manufacturer | Global Power Technology | |
Series | ||
Packaging |
Bulk
|
|
Part Status | Active | |
Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | |
Mounting Type | Surface Mount | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Technology | SiC (Silicon Carbide) Schottky | |
Capacitance @ Vr, F | 181pF @ 0V, 1MHz | |
Current - Average Rectified (Io) | 11.5A | |
Supplier Device Package | TO-252 | |
Operating Temperature - Junction | -55°C ~ 175°C | |
Voltage - DC Reverse (Vr) (Max) | 650 V | |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A | |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
ATTRIBUTE | DESCRIPTION | |
---|---|---|
ECCN | EAR99 | |
HTSUS | 8541.10.0080 | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
REACH Status | REACH info available upon request |
QUANTITY | UNIT PRICE | EXT PRICE |
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