IRF630NPBF _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	IRF630NPBF
Manufacturer	IR (Infineon Technologies)
Other Part Numbers	IRF630NPBF-ND *IRF630NPBF 2156-IRF630NPBF SP001564792
Description	MOSFET N-CH 200V 9.3A TO220AB
Detailed Description	N-Channel 200 V 9.3A (Tc) 82W (Tc) Through Hole TO-220AB
Manufacturer Standard Lead Time	10 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		IR (Infineon Technologies)
Series		HEXFET®
Packaging		Tube
Part Status		Active
Package / Case		TO-220-3
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 175°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		9.3A (Tc)
Rds On (Max) @ Id, Vgs		300mOhm @ 5.4A, 10V
Power Dissipation (Max)		82W (Tc)
Vgs(th) (Max) @ Id		4V @ 250µA
Supplier Device Package		TO-220AB
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±20V
Drain to Source Voltage (Vdss)		200 V
Gate Charge (Qg) (Max) @ Vgs		35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		575 pF @ 25 V

RESOURCE TYPE		LINK
Datasheets		IRF630NPBF
Other Related Documents		IR Part Numbering System
Product Training Modules		High Voltage Integrated Circuits (HVIC Gate Drivers)
Environmental Information		RoHS Certificate
Featured Product		Data Processing Systems

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

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