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IV1D12010O2

Part Number
IV1D12010O2
Manufacturer Inventchip Technology
Other Part Numbers
4084-IV1D12010O2-ND
4084-IV1D12010O2
Description DIODE SIL CARB 1.2KV 28A TO220-2
Detailed Description Diode 1200 V 28A Through Hole TO-220-2
Manufacturer Standard Lead Time 12 weeks
Datasheet Datasheet

Product Attributes

Category
Manufacturer Inventchip Technology
Series
Packaging
Tube
Part Status Active
Package / Case TO-220-2
Mounting Type Through Hole
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Technology SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F 575pF @ 1V, 1MHz
Current - Average Rectified (Io) 28A
Supplier Device Package TO-220-2
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 1200 V
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A
Current - Reverse Leakage @ Vr 50 µA @ 1200 V

Documents & Media

RESOURCE TYPE LINK
Datasheets IV1D12010O2

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
ECCN EAR99
HTSUS 8541.10.0080
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant

In Stock: 190

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