NGW30T60M3DFQ _ Single IGBTs_IGBTs_Transistors_Discrete Semiconductor Products

Part Number	NGW30T60M3DFQ
Manufacturer	Nexperia
Other Part Numbers	1727-NGW30T60M3DFQ-ND 934665659127 1727-NGW30T60M3DFQ
Description	IGBT TRENCH FS 600V 75A TO247-3L
Detailed Description	IGBT Trench Field Stop 600 V 75 A 285 W Through Hole TO-247-3L
Manufacturer Standard Lead Time	8 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors IGBTs Single IGBTs
Manufacturer		Nexperia
Series
Packaging		Tube
Part Status		Active
Package / Case		TO-247-3
Mounting Type		Through Hole
Operating Temperature		-40°C ~ 175°C (TJ)
Input Type		Standard
Reverse Recovery Time (trr)		110 ns
Vce(on) (Max) @ Vge, Ic		1.7V @ 15V, 30A
Supplier Device Package		TO-247-3L
IGBT Type		Trench Field Stop
Td (on/off) @ 25°C		60ns/180ns
Switching Energy		700µJ (on), 400µJ (off)
Test Condition		400V, 30A, 10Ohm, 15V
Gate Charge		130 nC
Current - Collector (Ic) (Max)		75 A
Voltage - Collector Emitter Breakdown (Max)		600 V
Current - Collector Pulsed (Icm)		90 A
Power - Max		285 W

RESOURCE TYPE		LINK
Datasheets		NGW30T60M3DFQ
Featured Product		NGW30T60M3DFQ 600 V Insulated Gate Bipolar Transistors

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		Not Applicable
RoHS Status		ROHS3 Compliant

Can ship immediately.

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