RGTH80TK65DGC11 _ Single IGBTs_IGBTs_Transistors_Discrete Semiconductor Products

Part Number	RGTH80TK65DGC11
Manufacturer	ROHM Semiconductor
Other Part Numbers	RGTH80TK65DGC11-ND
Description	IGBT TRNCH FIELD 650V 31A TO3PFM
Detailed Description	IGBT Trench Field Stop 650 V 31 A 66 W Through Hole TO-3PFM
Manufacturer Standard Lead Time	22 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors IGBTs Single IGBTs
Manufacturer		ROHM Semiconductor
Series
Packaging		Tube
Part Status		Active
Package / Case		TO-3PFM, SC-93-3
Mounting Type		Through Hole
Operating Temperature		-40°C ~ 175°C (TJ)
Input Type		Standard
Reverse Recovery Time (trr)		58 ns
Vce(on) (Max) @ Vge, Ic		2.1V @ 15V, 40A
Supplier Device Package		TO-3PFM
IGBT Type		Trench Field Stop
Td (on/off) @ 25°C		34ns/120ns
Test Condition		400V, 40A, 10Ohm, 15V
Gate Charge		79 nC
Current - Collector (Ic) (Max)		31 A
Voltage - Collector Emitter Breakdown (Max)		650 V
Current - Collector Pulsed (Icm)		160 A
Power - Max		66 W

RESOURCE TYPE		LINK
Datasheets		RGTH80TK65DGC11
Product Training Modules		Insulated Gate Bipolar Transistors (IGBTs)
Product Training Modules		Industrial Motor Products: Part 1 - Power Devices/Gate Drivers
Product Training Modules		High-Power Devices for EV DC Fast-Charging Stations

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

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