RGWS80TS65GC13 _ Single IGBTs_IGBTs_Transistors_Discrete Semiconductor Products

Part Number	RGWS80TS65GC13
Manufacturer	ROHM Semiconductor
Other Part Numbers	846-RGWS80TS65GC13-ND 846-RGWS80TS65GC13
Description	IGBT TRENCH FS 650V 71A TO247G
Detailed Description	IGBT Trench Field Stop 650 V 71 A 202 W Through Hole TO-247G
Manufacturer Standard Lead Time	22 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors IGBTs Single IGBTs
Manufacturer		ROHM Semiconductor
Series
Packaging		Tube
Part Status		Active
Package / Case		TO-247-3
Mounting Type		Through Hole
Operating Temperature		-40°C ~ 175°C (TJ)
Input Type		Standard
Vce(on) (Max) @ Vge, Ic		2V @ 15V, 40A
Supplier Device Package		TO-247G
IGBT Type		Trench Field Stop
Td (on/off) @ 25°C		40ns/114ns
Switching Energy		700µJ (on), 660µJ (off)
Test Condition		400V, 40A, 10Ohm, 15V
Gate Charge		83 nC
Current - Collector (Ic) (Max)		71 A
Voltage - Collector Emitter Breakdown (Max)		650 V
Current - Collector Pulsed (Icm)		120 A
Power - Max		202 W

RESOURCE TYPE		LINK
Datasheets		RGWS80TS65GC13
Product Training Modules		Insulated Gate Bipolar Transistors (IGBTs)
Product Training Modules		Industrial Motor Products: Part 1 - Power Devices/Gate Drivers
Product Training Modules		High-Power Devices for EV DC Fast-Charging Stations

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

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