SIHB6N80AE-GE3 _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	SIHB6N80AE-GE3
Manufacturer	Vishay / Siliconix
Other Part Numbers	742-SIHB6N80AE-GE3-ND 742-SIHB6N80AE-GE3
Description	E SERIES POWER MOSFET D2PAK (TO-
Detailed Description	N-Channel 800 V 5A (Tc) 62.5W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer Standard Lead Time	28 weeks

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Vishay / Siliconix
Series		E
Packaging		Tube
Part Status		Active
Package / Case		TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type		Surface Mount
Operating Temperature		-55°C ~ 150°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		5A (Tc)
Rds On (Max) @ Id, Vgs		950mOhm @ 2A, 10V
Power Dissipation (Max)		62.5W (Tc)
Vgs(th) (Max) @ Id		4V @ 250µA
Supplier Device Package		TO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±30V
Drain to Source Voltage (Vdss)		800 V
Gate Charge (Qg) (Max) @ Vgs		22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		422 pF @ 100 V

RESOURCE TYPE		LINK
Datasheets		SIHB6N80AE-GE3

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

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