TW015Z120C,S1F _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	TW015Z120C,S1F
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Other Part Numbers	264-TW015Z120C,S1F-ND 264-TW015Z120C,S1F TW015Z120C,S1F(S
Description	G3 1200V SIC-MOSFET TO-247-4L 1
Detailed Description	N-Channel 1200 V 100A (Tc) 431W (Tc) Through Hole TO-247-4L(X)
Manufacturer Standard Lead Time	24 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Toshiba Electronic Devices and Storage Corporation
Series
Packaging		Tube
Part Status		Active
Package / Case		TO-247-4
Mounting Type		Through Hole
Operating Temperature		175°C
Technology		SiC (Silicon Carbide Junction Transistor)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		100A (Tc)
Rds On (Max) @ Id, Vgs		21mOhm @ 50A, 18V
Power Dissipation (Max)		431W (Tc)
Vgs(th) (Max) @ Id		5V @ 11.7mA
Supplier Device Package		TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On)		18V
Vgs (Max)		+25V, -10V
Drain to Source Voltage (Vdss)		1200 V
Gate Charge (Qg) (Max) @ Vgs		158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds		6000 pF @ 800 V

RESOURCE TYPE		LINK
Datasheets		TW015Z120C,S1F

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
RoHS Status		ROHS3 Compliant

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