Part Number |
UF3C120080K3S
|
---|---|
Manufacturer | UnitedSiC (Qorvo) |
Other Part Numbers |
2312-UF3C120080K3S-ND
2312-UF3C120080K3S
|
Description | SICFET N-CH 1200V 33A TO247-3 |
Detailed Description | N-Channel 1200 V 33A (Tc) 254.2W (Tc) Through Hole TO-247-3 |
Manufacturer Standard Lead Time | 44 weeks |
Datasheet | Datasheet |
Category | ||
---|---|---|
Manufacturer | UnitedSiC (Qorvo) | |
Series | ||
Packaging |
Tube
|
|
Part Status | Active | |
Package / Case | TO-247-3 | |
Mounting Type | Through Hole | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Technology | SiCFET (Cascode SiCJFET) | |
FET Type | N-Channel | |
Current - Continuous Drain (Id) @ 25°C | 33A (Tc) | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 12V | |
Power Dissipation (Max) | 254.2W (Tc) | |
Vgs(th) (Max) @ Id | 6V @ 10mA | |
Supplier Device Package | TO-247-3 | |
Drive Voltage (Max Rds On, Min Rds On) | 12V | |
Vgs (Max) | ±25V | |
Drain to Source Voltage (Vdss) | 1200 V | |
Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V | |
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
RESOURCE TYPE | LINK | |
---|---|---|
Datasheets | UF3C120080K3S | |
Video File | Minimizing EMI and switching loss for SiC FETs | |
Environmental Information | UnitedSic REACH | |
Environmental Information | UnitedSic RoHS Cert | |
PCN Design/Specification | Mult Dev A/T 4/Jun/2021 | |
PCN Design/Specification | Mult Dev BOM Chg 4/Jun/2021 | |
PCN Assembly/Origin | Mult Dev A/T Chgs 4/Jun/2021 |
ATTRIBUTE | DESCRIPTION | |
---|---|---|
ECCN | EAR99 | |
HTSUS | 8541.29.0095 | |
Moisture Sensitivity Level (MSL) | Not Applicable | |
REACH Status | REACH Unaffected | |
RoHS Status | ROHS3 Compliant |
QUANTITY | UNIT PRICE | EXT PRICE |
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