￥ 人民币 $ USD € 欧元
简体中文 繁体中文 Русский English
13826519287
Menu
Single FETs, MOSFETs
Manufacturer
Series
Packaging
Product Status
Package / Case
Mounting Type
Operating Temperature
Technology
FET Type
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
FET Feature
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Grade
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Qualification
Stocking Options
Environmental Options
Media
Marketplace Product
122 Results
Mfr Part # Quantity Price Series Package Product Status Package / Case Mounting Type Operating Temperature Technology FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs FET Feature Power Dissipation (Max) Vgs(th) (Max) @ Id Supplier Device Package Grade Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Drain to Source Voltage (Vdss) Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Qualification
AS1M025120P
AS1M025120P
N-CHANNEL SILICON CARBIDE POWER
Anbon Semiconductor
124
In Stock
1 : $38.03
10 : $338.00
100 : $2,956.00
Tube
Tube
Active
 TO-247-3 Through Hole -55°C ~ 150°C (TJ) SiCFET (Silicon Carbide) N-Channel 90A (Tc) 34mOhm @ 50A, 20V - 463W (Tc) 4V @ 15mA TO-247-3 - 20V +25V, -10V 1200 V 195 nC @ 20 V 3600 pF @ 1000 V -
AS2M040120P
AS2M040120P
N-CHANNEL SILICON CARBIDE POWER
Anbon Semiconductor
50
In Stock
1 : $20.69
10 : $183.90
100 : $1,608.00
500 : $6,860.00
Bulk
Bulk
Active
 TO-247-3 Through Hole -55°C ~ 150°C (TJ) SiCFET (Silicon Carbide) N-Channel 60A (Tc) 55mOhm @ 40A, 20V - 330W (Tc) 4V @ 10mA TO-247-3 - 20V +25V, -10V 1200 V 142 nC @ 20 V 2946 pF @ 1000 V -
AS1M025120T
AS1M025120T
N-CHANNEL SILICON CARBIDE POWER
Anbon Semiconductor
15
In Stock
1 : $38.05
10 : $338.10
100 : $2,957.00
Tube
Tube
Active
 TO-247-4 Through Hole -55°C ~ 150°C (TJ) SiCFET (Silicon Carbide) N-Channel 65A (Tc) 34mOhm @ 50A, 20V - 370W (Tc) 4V @ 15mA TO-247-4 - 20V +25V, -10V 1200 V 195 nC @ 20 V 4200 pF @ 1000 V -
AS1M040120T
AS1M040120T
N-CHANNEL SILICON CARBIDE POWER
Anbon Semiconductor
17
In Stock
1 : $20.71
10 : $184.10
100 : $1,610.00
500 : $6,870.00
Tube
Tube
Active
 TO-247-4 Through Hole -55°C ~ 150°C (TJ) SiCFET (Silicon Carbide) N-Channel 60A (Tc) 55mOhm @ 40A, 20V - 330W (Tc) 4V @ 10mA TO-247-4 - 20V +25V, -10V 1200 V 142 nC @ 20 V 2946 pF @ 1000 V -
AS1M080120P
AS1M080120P
N-CHANNEL SILICON CARBIDE POWER
Anbon Semiconductor
92
In Stock
1 : $11.51
10 : $101.40
100 : $877.00
500 : $3,975.00
1,000 : $7,290.00
Tube
Tube
Active
 TO-247-3 Through Hole -55°C ~ 150°C (TJ) SiCFET (Silicon Carbide) N-Channel 36A (Tc) 98mOhm @ 20A, 20V - 192W (Tc) 4V @ 5mA TO-247-3 - 20V +25V, -10V 1200 V 79 nC @ 20 V 1475 pF @ 1000 V -
AS3401
AS3401
P-CHANNEL ENHANCEMENT MODE MOSFE
Anbon Semiconductor
58,763
In Stock
3,000 : $150.00
6,000 : $240.00
9,000 : $360.00
30,000 : $1,200.00
75,000 : $2,250.00
150,000 : $4,500.00
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Active
 TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C (TJ) MOSFET (Metal Oxide) P-Channel 4.4A (Ta) 55mOhm @ 4.4A, 10V - 1.2W (Ta) 1.4V @ 250µA SOT-23 - 2.5V, 10V ±12V 30 V 7.2 nC @ 10 V 680 pF @ 15 V -
2N7002EY
2N7002EY
N-CHANNEL SMD MOSFET ESD PROTECT
Anbon Semiconductor
17,624
In Stock
3,000 : $60.00
6,000 : $120.00
9,000 : $180.00
30,000 : $600.00
75,000 : $1,500.00
150,000 : $1,500.00
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Active
 TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C (TJ) MOSFET (Metal Oxide) N-Channel 340mA (Ta) 5Ohm @ 300mA, 10V - 350mW (Ta) 2.5V @ 250µA SOT-23 - 4.5V, 10V ±20V 60 V 2.4 nC @ 10 V 18 pF @ 30 V -
BSS138
BSS138
N-CHANNEL ENHANCEMENT MODE MOSFE
Anbon Semiconductor
114,762
In Stock
3,000 : $90.00
6,000 : $180.00
9,000 : $180.00
30,000 : $600.00
75,000 : $1,500.00
150,000 : $1,500.00
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Active
 TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C (TJ) MOSFET (Metal Oxide) N-Channel 220mA (Ta) 3Ohm @ 500mA, 10V - 350mW (Ta) 1.6V @ 250µA SOT-23 - 4.5V, 10V ±20V 50 V - 27 pF @ 25 V -
AS3400
AS3400
N-CHANNEL ENHANCEMENT MODE MOSFE
Anbon Semiconductor
6,447
In Stock
3,000 : $150.00
6,000 : $240.00
9,000 : $360.00
30,000 : $1,200.00
75,000 : $2,250.00
150,000 : $4,500.00
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Active
 TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C (TJ) MOSFET (Metal Oxide) N-Channel 5.6A (Ta) 27mOhm @ 5.6A, 10V - 1.2W (Ta) 1.5V @ 250µA SOT-23 - 2.5V, 10V ±12V 30 V 4.8 nC @ 4.5 V 535 pF @ 15 V -
AS2312
AS2312
N-CHANNEL ENHANCEMENT MODE MOSFE
Anbon Semiconductor
22,436
In Stock
3,000 : $150.00
6,000 : $240.00
9,000 : $360.00
30,000 : $900.00
75,000 : $2,250.00
150,000 : $4,500.00
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Active
 TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C (TJ) MOSFET (Metal Oxide) N-Channel 6.8A (Ta) 18mOhm @ 6.8A, 4.5V - 1.2W (Ta) 1V @ 250µA SOT-23 - 1.8V, 4.5V ±10V 20 V 11.05 nC @ 4.5 V 888 pF @ 10 V -
1