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Single FETs, MOSFETs
Manufacturer
Series
Packaging
Product Status
Package / Case
Mounting Type
Operating Temperature
Technology
FET Type
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
FET Feature
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Grade
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Qualification
Stocking Options
Environmental Options
Media
Marketplace Product
4 Results
Mfr Part # Quantity Price Series Package Product Status Package / Case Mounting Type Operating Temperature Technology FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs FET Feature Power Dissipation (Max) Vgs(th) (Max) @ Id Supplier Device Package Grade Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Drain to Source Voltage (Vdss) Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Qualification
CGD65B130S2-T13
CGD65B130S2-T13
650V GAN HEMT, 130MOHM, DFN5X6.
Cambridge GaN Devices
4,885
In Stock
5,000 : $15,000.00
Tape & Reel (TR)
ICeGaN™
Tape & Reel (TR)
Cut Tape (CT)
Active
 8-PowerVDFN Surface Mount -55°C ~ 150°C (TJ) GaNFET (Gallium Nitride) - 12A (Tc) 182mOhm @ 900mA, 12V Current Sensing - 4.2V @ 4.2mA 8-DFN (5x6) - 9V, 20V +20V, -1V 650 V 2.3 nC @ 12 V - -
CGD65B200S2-T13
CGD65B200S2-T13
650V GAN HEMT, 200MOHM, DFN5X6.
Cambridge GaN Devices
4,355
In Stock
5,000 : $10,650.00
Tape & Reel (TR)
ICeGaN™
Tape & Reel (TR)
Cut Tape (CT)
Active
 8-PowerVDFN Surface Mount -55°C ~ 150°C (TJ) GaNFET (Gallium Nitride) - 8.5A (Tc) 280mOhm @ 600mA, 12V Current Sensing - 4.2V @ 2.75mA 8-DFN (5x6) - 9V, 20V +20V, -1V 650 V 1.4 nC @ 12 V - -
CGD65A055S2-T07
CGD65A055S2-T07
650V GAN HEMT, 55MOHM, DFN8X8. W
Cambridge GaN Devices
737
In Stock
1,000 : $9,540.00
Tape & Reel (TR)
ICeGaN™
Tape & Reel (TR)
Cut Tape (CT)
Active
 16-PowerVDFN Surface Mount -55°C ~ 150°C (TJ) GaNFET (Gallium Nitride) - 27A (Tc) 77mOhm @ 2.2A, 12V Current Sensing - 4.2V @ 10mA 16-DFN (8x8) - 12V +20V, -1V 650 V 6 nC @ 12 V - -
CGD65A130S2-T13
CGD65A130S2-T13
650V GAN HEMT, 130MOHM, DFN8X8.
Cambridge GaN Devices
3,352
In Stock
3,500 : $11,620.00
Tape & Reel (TR)
ICeGaN™
Tape & Reel (TR)
Cut Tape (CT)
Active
 16-PowerVDFN Surface Mount -55°C ~ 150°C (TJ) GaNFET (Gallium Nitride) - 12A (Tc) 182mOhm @ 900mA, 12V Current Sensing - 4.2V @ 4.2mA 16-DFN (8x8) - 12V +20V, -1V 650 V 2.3 nC @ 12 V - -
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